ANS DE LA SOCIETE PEDOLOGIQUE ALLEMANDE)T.SCHEFFER F.1976; GOETTINGEN; DEUTSCHE BODENKD. GES.; DA. 1976; PP. 1-20; H.T. 20; BIBL. 3 P.Miscellaneous

CHEMISCH-MINERALOGISCHE UND MIKROMORPHOLOGISCHE UNTERSUCHUNG EINER EUTROPHEN (RAMANN-) BRAUNERDE DES BUDAPESTER HUEGELLANDES. = ETUDE CHIMIQUE MINERALOGIQUE, MICROMORPHOLOGIQUE D'UN SOL BRUN FORESTIER EUTROPHIQUE DU DISTRICT DE BUDAPEST, HONGRIESCHEFFER F; GEBHARDT H.1977; GEODERMA; PAYS-BAS; DA. 1977; VOL. 17; NO 2; PP. 145-163; ABS. ANGL.; BIBL. 1 P. 1/2; 14 ILL.Article

Der Boden, ein dynamisches System. in Untersuchungen zur eisenzeitlichen und frühmittelalterlichen Flur in Mitteleuropa und ihrer Nutzung. II. (Le sol, un système dynamique)SCHEFFER, F.Abhandlungen der Akademie der Wissenschaften in Gottingen, Philologisch-Historische Klasse Gottingen. 1980, Vol 116, pp 7-21Article

MINERALOGISCHE SCHNELLUNTERSUCHUNG DER GROBTON-,SCHLUFF-UND FEINSAANDFRAKTIONEN VON BOEDEN MIT DEM PHASENKONTRASTMIKROSKOP.(ETUDE MINERALOGIQUE RAPIDE DES FRACTIONS D'ARGILES GROSSIERES,LIMONS ET SABLES FINS DE SOLS,A L'AIDE DU MICROSCOPE A CONTRASTE DE PHASE).GEBHARDT H; MEYER B; SCHEFFER F et al.1967; ZEISS MITT; DEU; 1967, VOL. 4, NUM. 0007, P. 309 A 322Miscellaneous

UEBER DIE TIRSE MAROKKOS-SCHWARZERDEARTIGE BOEDEN UNTER SUBTROPISCHEM KLIMA (LES TIRS DU MAROC,SOLS SEMBLABLES AUX TERRES NOIRES SOUS CLIMAT SUBTROPICAL).SCHEFFER F; SCHOEN U; HESS C et al.1967; AN EDAFOL. AGROBIOL.; ESP; 1967, VOL. 26, P. 653 A 672Miscellaneous

MINERALOGISCHE SCHNELLUNTERSUCHUNG DER GROBTON-,SCHLUFF-UND FEINSAANDFRAKTIONEN VON BOEDEN MIT DEM PHASENKONTRASTMIKROSKOP.(ETUDE MINERALOGIQUE RAPIDE DES FRACTIONS D'ARGILES GROSSIERES,LIMONS ET SABLES FINS DE SOLS,A L'AIDE DU MICROSCOPE A CONTRASTE DE PHASE).GEBHARDT H; MEYER B; SCHEFFER F et al.1967; ZEISS MITT; DEU; 1967, VOL. 4, NUM. 0007, P. 309 A 322Miscellaneous

LEHRBUCH DER BODENKUNDE. 10., DURCHGESEHENE AUFLAGE = MANUEL DE PEDOLOGIE. 10EME EDITION REVISEESCHEFFER F; SCHACHTSCHABEL P; BLUME HP et al.1979; ; DEU; STUTTGART: FERDINAND ENKE; DA. 1979; 394 P.; 229 ILL.Book

LEHRBUCH DER BODENKUNDE. = TRAITE DE PEDOLOGIESCHEFFER F; SCHACHTSCHABEL P; BLUME HP et al.sdSTUTTGART FERDINAND ENKE,1976, P. 1 A 394Book

Lehrbuch der Bodenkunde = Manuel de pédologieSCHEFFER, F; SCHACHTSCHABEL, P.1982, 442 p., isbn 3-432-84771-8Book

Analysis of ordering in GaInP by means of x-ray diffractionLIU, Q; LAKNER, H; SCHEFFER, F et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 2770-2774, issn 0021-8979Article

Optical and electrical properties of the AlixGa_1-xAs/GaAs single heterojunctions grown by low pressure MOVPEGUIMARAES, F. E. G; GYURO, I; SCHEFFER, F et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 434-439, issn 0022-0248Conference Paper

Ultralow doping profiles for applications in 3D integrated varactor tuned oscillators grown by MOVPEGYURO, I; SCHEFFER, F; JOSEPH, M et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 956-959, issn 0022-0248Conference Paper

Cardiorespiratory stability of premature boys and girls during kangaroo careFISCHER, C. B; SONTHEIMER, D; SCHEFFER, F et al.Early human development. 1998, Vol 52, Num 2, pp 145-153, issn 0378-3782Article

High breakdown voltage InGaAs/InAlAs HFET using In_0.5Ga_0.5P spacer layerSCHEFFER, F; HEEDT, C; REUTER, R et al.Electronics Letters. 1994, Vol 30, Num 2, pp 169-170, issn 0013-5194Article

X-ray characterization of very thin Ga_xIn_1-xP (x~0.5) layers grown on InPLIU, Q; SCHEFFER, F; LINDNER, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 188-192, issn 0921-5107Conference Paper

High doping performance of lattice matched GaInP on GaAsSCHEFFER, F; BUCHALI, F; LINDNER, A et al.Journal of crystal growth. 1992, Vol 124, Num 1-4, pp 475-482, issn 0022-0248Conference Paper

Scanning transmission electron microscopy of heterointerfaces grown by metalorganic vapor phase epitaxy (MOVPE)LAKNER, H; BOLLIG, B; KUBALEK, E et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 452-457, issn 0022-0248Conference Paper

Highly strained In_0.5Ga_0.5P as wide-gap material on InP substrate for heterojunction field effect transistor applicationSCHEFFER, F; LINDNER, A; LIU, Q et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 326-331, issn 0022-0248Conference Paper

Growth and characterization of AlGaAs/GaAs Bragg reflectors for non-linear optoelectronics devicesSCHEFFER, F; JOSEPH, M; PROST, W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 9, Num 1-3, pp 361-364Conference Paper

Low-pressure metalorganic vapour phase epitaxy growth of InAs/GaAs short period superlattices on InP substratesLINDNER, A; LIU, Q; SCHEFFER, F et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 771-777, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxial grown heterointerfaces to GaInP with group-III and group-V exchangePROST, W; SCHEFFER, F; LIU, Q et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 538-543, issn 0022-0248Conference Paper

Effects of deep levels and Si-doping on GaInP material properties investigated by means of optical methodsLIU, Q; QUEDEWEIT, U; SCHEFFER, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 2-3, pp 181-184, issn 0921-5107Conference Paper